Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process
During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...
Several vendors are rolling out next-generation inspection systems and software that locates problematic defects in chips caused by processes in extreme ultraviolet (EUV) lithography. Each defect ...
The proposed framework consists of Varied Defect Synthesis (VDS) pseudo-anomaly generator, transformer-based backbone, voting network, and differentiable clustering module, enabling precise point- and ...
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