Abstract: This article investigates the failure mechanisms of the gallium nitride high electron mobility transistors (GaN HEMTs) under overcurrent stress. The overcurrent behavior of GaN hybrid ...
With wearable Internet of Things devices, such as smartwatches, contact with skin adds a new layer of complexity. .
Abstract: According to Indentation hardness testing theory, a three-dimensional finite element numerical simulation model of Rockwell hardness is proposed. Based on ANSYS. The stress development rule ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results