IR’s latest high-voltage gate drivers are ideal for three-phase applications that require industrial level ruggedness. These new ICs feature IR’s proprietary negative Vs immunity circuitry, allowing ...
In most switching applications, the bootstrap circuit is widely used to drive the high-side metal-oxidesemiconductor field-effect transistor (MOSFET). This bootstrap circuit technique has the ...
Allegro MicroSystems has created an isolated gate driver IC for GaN power transistors that has no need for high-side bootstrapping nor the provision of a secondary side drive supply voltage. Instead, ...
Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...
GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power electronics in consumer electronics, datacenters, industrial motors, appliances, and ...
The IRS26302D, 600V three-phase gate driver with ground-fault protection, includes a seventh drive channel for a power factor correction (PFC) switch or inverter brake. It integrates power MOSFET/IGBT ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver IC [1] for automotive brushed DC motors, ...
High-voltage level shifters and gate drivers form critical interfaces within power converters, enabling low-voltage control circuits to drive high-voltage power stages reliably and efficiently. These ...
Toshiba: TB9104FTG, a gate driver for bridge circuits used in high-current automotive brushed DC motors. The accelerating electrification of movable components in vehicles has increased the number of ...
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